Toyoda Gosei Succeeds in Making Larger GaN Substrates for Next-Generation Power Devices

March 15, 2022

The company Toyoda Gosei and Osaka University have succeeded in making larger bulk GaN substrates for next-generation power devices. By employing the sodium flux growth method, they were able to fabricate seeded GaN crystals of over 6 inches, the world’s largest level.

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