Yes. There is no difference in scanning quality.

The main ones are:

1. Early non-destructive quality sorting
Rapid scanning enables pre-wafering quality binning. Low-value pucks can be discarded early, while high-grade continue for futher processing.

2. Defect-aware downstream processing
When XYZ defect coordinates are known, wafer quality can be predicted before slicing. Operators can simulate wafering outcome and apply automated routines, such as Smart Wafering™, to optimize processing strategies. It reduces scrap and maximizes defect-free wafer output — without growing more crystals.

3. Optimized laser cutting
As laser slicing becomes more common, defect maps help skip defective regions and process only high-quality zones.

4. Closed-loop crystal growth feedback
3D defect maps give crystal growth engineers fast, objective feedback. They can test process adjustments more rapidly and measure which changes truly deliver improvements.

We benchmarked puck-level scanning results against established post-wafering inspection tools such as SICA, Candela, and VisionTec.

For an in-depth view check this article: What does the SiC Puck Scanner reveal? 
It shows how puck-level defect maps line up with Raman and PL inspection of the produced wafers.

Silicon Carbide (SiC) is a surging semiconductor. Among different semiconductors, the most commonly used today are industrially grown Silicon (Si) and Gallium Arsenide (GaAs). However, recently there has been a shift in the market—silicon carbide is attracting more and more investment due to its superior properties. Compared to conventional silicon-based devices, SiC offers almost 10X the breakdown field strength (2.8MV/cm vs 0.3MV/cm) and 3X the thermal conductivity, making it ideal for high-voltage applications: electric cars, power supplies, solar inverters, trains and wind turbines. Its superior conductive properties are increasingly necessary for automotive and power generation devices operating at higher voltages, higher temperatures, and higher frequencies than ever before.

Another benefit is that a SiC epitaxial layer deposited on a substrate could be much thinner, down to one-tenth of a traditional Si epitaxial layer. For example, the SiC epitaxy on SiC substrates provides a range of available layer thicknesses from sub-micron to more than 200µm. In comparison, this is is about one-tenth of that of Si epitaxial layers.

Additionally, SiC devices reduce the amount of energy lost in a system, improve performance, reliability, and cut operating costs. For instance, in hybrid and electric vehicles SiC power solutions contribute to increased fuel economy and a larger cabin area, while in solar power generation applications they improve power loss by approximately 50%, contributing to reduced global warming.

Due to these advantages, SiC is becoming the standard material used for power electronics applications.

SiC boules are typically crystallised by one of the two processes:

1. Sublimation method (often called “Rayleigh’s method”) that sublimates SiC powder, transports sublimated gas to the surface of the seed crystal by a heat gradient, and recrystallises it under cold temperatures. Compared with conventional Si ingots which are crystallised in the liquid phase from Si melt, the growth rate using the sublimation method is slow, making crystal defects likely to occur, and therefore requires advanced technology for crystal control.

2. High-Temperature Chemical Vapour Deposition (HTCVD). The method feeds precursor gases upwards through heating zone in vertical graphite crucible to the seed crystal placed at the top. The precursor gases are SiH₄ and a hydrocarbon. The growth temperature is ~2100–2300°C, the growth rate is 0.1-1mm/h.

Crystal growth is the most difficult step in the material value chain.The growth is mostly a blind process – there is no way to see or directly measure what is growing. As a result, compared with Silicon, SiC is a highly defective material.

Despite efforts in quality improvement the defect yield of raw crystals is still measured by double digits in average across the industry. Downstream manufacturers may not see the full weight of this problem, as defective material is filtered out earlier in the chain. But its cost is built into every SiC device.

Typical defects are micropipes and dislocations within the atomic lattice. Each defect degrades the manufacturing yield and reliability for SiC power devices. The micropipes reduce blocking voltage and gate oxide reliability. The dislocations do the same, and also reduce local carrier lifetime.

This is why detecting them at the earliest production stage is the game-changer for the industry.

Gallium Nitride (GaN) is another semiconductor showing great promise for the future. There is a great deal of ongoing discussions and questions about GaN versus SiC crystals, and which device / material is best suited for a specific application. This table presents a short summary of both material properties.

Given its higher electron mobility, GaN is more suitable for lower power/voltage, high frequency applications while SiC stands for high power and high voltage switching power applications.
With a thermal conductivity of 1.3 W/cm²K, GaN is worse at transferring thermal loads. It is also easier to manufacture large and uniform wafers from SiC than from GaN.

Ultimately, both SiC and GaN will play important roles but each will settle into its own niche.

To learn more about SiC vs GaN competition, refer, for example, to https://www.powerelectronics.com/technologies/power-management/article/21864289/the-great-semi-debate-sic-or-gan